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| www.irf.com 1 08/20/2012 AUIRF6218S auirf6218l hexfet power mosfet features advanced planar technology low on-resistance p-channel dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and rugge- dized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. automotive grade g d s gate drain source to-262 auirf6218l g d s d d 2 pak AUIRF6218S s d g d absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss -150v r ds(on) max 150m ? i d -27a s d g parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from cas mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? ??? 0.61 c/w r ? (p c b m o unt ed, s t eady s t ate) ??? 40 1.6 250 max. -27 -19 -110 -150 20 300 10 lbf?in (1.1n?m) 8.2 -55 to + 175 210 -16
AUIRF6218S/l 2 www.irf.com 08/20/2012 s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.6mh, r g = 25 ? , i as = -17a. i sd ? -17a, di/dt ? -520a/ s, v dd ?? v (br)dss , t j ? 175c. pulse width ? 300 s; duty cycle ? 2%. r is measured at t j of approximately 90c. when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -150 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.17 ??? v/c r ds(on) static drain-to-source on-resistance ??? 120 150 m ? a ??? ??? -250 i gs s gate-to-source forward leakage ??? ??? -100 na gate-to-source reverse leakage ??? ??? 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 71 110 q gs gate-to-source charge ??? 21 ??? nc q gd g ate-to-drain ("miller") char ge ??? 32 ??? t d(on) turn-on delay time ??? 21 ??? t r rise time ??? 70 ??? ns t d(off) turn-off delay time ??? 35 ??? t f fall time ??? 30 ??? c iss input capacitance ??? 2210 ??? c oss output capacitance ??? 370 ??? c rs s reverse transfer capacitance ??? 89 ??? pf c oss output capacitance ??? 2220 ??? c oss output capacitance ??? 170 ??? c oss eff. effective output capacitance ??? 340 ??? diode characteristics parameter min. typ. max . units i s continuous source current ??? ??? -27 (body diode) a i sm pulsed source current ??? ??? -110 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 150 ??? ns q rr reverse recovery charge ??? 860 ??? nc v gs = 0v, v ds = -1.0v, ? = 1.0mhz v gs = 0v, v ds = -120v, ? = 1.0mhz v gs = 0v, v ds = 0v to -120v v gs = -10v v dd = -75v i d = -16a r g = 3.9 ? t j = 25c, i s = -16a, v gs = 0v t j = 25c, i f = -16a, v dd = -25v di/dt = -100a/ s conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -16a v ds = v gs , i d = -250 a v ds = -120v, v gs = 0v v ds = -120v, v gs = 0v, t j = 150c mosfet symbol showing the integral reverse p-n junction diode. conditions v gs = -10v v gs = 0v v ds = -25v ? = 1.0mhz v ds = -50v, i d = -16a conditions i d = -16a v ds = -120v v gs = -20v v gs = 20v AUIRF6218S/l www.irf.com 3 08/20/2012 qualification information ? to-262 n/a d 2 pak msl1 class h2 (+/- 3000v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 rohs compliant yes qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level esd machine model class m4 (+/- 600v) ?? aec-q101-002 human body model AUIRF6218S/l 4 www.irf.com 08/20/2012 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 2 4 6 8 10 12 -v gs , gate-to-source voltage (v) 1.0 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) t j = 25c t j = 175c v ds = 50v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -27a v gs = -10v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v ? 60 s pulse width tj = 25c -4.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -4.5v ? 60 s pulse width tj = 175c vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v AUIRF6218S/l www.irf.com 5 08/20/2012 fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100 sec tc = 25c tj = 175c single pulse 0 1020304050607080 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = -16a AUIRF6218S/l 6 www.irf.com 08/20/2012 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 9. maximum drain current vs. ambient temperature ???? ??????? + - 25 50 75 100 125 150 175 t c , case temperature (c) 0 5 10 15 20 25 30 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 0.264 0.000285 0.206 0.001867 0.140 0.013518 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? ? c ci i ? ri ci= ? i ? ri AUIRF6218S/l www.irf.com 7 08/20/2012 fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g -3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 0 20406080 -i d , drain current (a) 100 150 200 250 300 350 400 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = -10v 4 5 6 7 8 9 10 11 12 -v gs, gate -to -source voltage (v) 0 100 200 300 400 500 600 700 800 900 1000 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = -27a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -4.6a -6.3a bottom -16a AUIRF6218S/l 8 www.irf.com 08/20/2012 !!" " ! # ! ! " " # $ # %&% ''&' ('( )&) *"+ AUIRF6218S/l www.irf.com 9 08/20/2012 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-262 package outline dimensions are shown in millimeters (inches) to-262 part marking information $ # %&% ''&' ('( )&) *"+ ! " " # AUIRF6218S/l 10 www.irf.com 08/20/2012 !" # dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. AUIRF6218S/l www.irf.com 11 08/20/2012 ordering information ba se part number package type standard pack complete part number form quantity auirf6218l to-262 tube 50 auirf6218l AUIRF6218S d2pak tube 50 AUIRF6218S tape and reel left 800 AUIRF6218Strl tape and reel right 800 AUIRF6218Strr AUIRF6218S/l 12 www.irf.com 08/20/2012 $ % & # ' ( & # ' ' ' & ' & % % & " ) *+$, - & % ! . " + / 0 # " 0 %" 1 .% . - % %" 2- % & . ' % " % " ( " 1 3 # ' & . " # % % ' ' ' " & " " % / " & % % & & - % & & " % " ' ' 3 % %' ' % /% % " 4 5% % 3 ' 5% % ' % ' ' ' ' ' ' - ' % ' % %' % /% 3 ' & " 6 % % % 7 + % 7+ $4 ' 7+ % . % %' " 5% # % % 7+ % ' . % ' % 5% 0 # % % % . " & & % 46!14 89:;: . *+$," 5% # ' % % & ' % . " + * , ) # - ! "#$ % ! &' ! |
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